![]() ![]() New devices are manufactured using lead-free technology (Lead Free) and comply with the European RoHS standard. Storage Temperature T stg – 65 to 200 ☌ Įxceeding the maximum parameters during operation is not allowed and can lead to failure of the device.Total Power Dissipation Ptot at T amb £ 25 ☌ 0.5 W. ![]() Emitter-base Voltage VEBO (I C = 0) 5 V.Collector-emitter VCEO Voltage (I B = 0) 30 V.Collector-base Voltage VCBO (I E = 0) 60 V.The maximum technical specifications of 2N2222 (at TA < +25oC): The datasheet states that the device is designed to operate at high switching speeds and provide effective amplification over a wide frequency range. They are true at ambient temperature (TA) of no more than +25oC. Let’s take a closer look at the 2N2222 transistor, its specifications and features. You should note that the “K” pin is physically connected to the metal case. The pin assignment is as follows (clockwise from the small protrusion): The pinout of the 2N2222 in the TO-18 is shown in the figure below. ![]()
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